A Class-D Tri-Phasing CMOS Power Amplifier With an Extended Marchand-Balun Power Combiner
نویسندگان
چکیده
منابع مشابه
A Class E Power Amplifier with Low Voltage Stress
A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...
متن کاملCMOS compatible transformer power combiner
Introduction: Power amplifiers are a key building block in any radio transceiver, usually necessitating a multi-chip module solution owing to the requirement of a specialised process with high voltage breakdown and low-loss passive components. Several researches have demonstrated that CMOS technology is a viable option for implementation of the power amplifier. Fully integrated transformer base...
متن کاملA 28-36 GHz Optimized CMOS Distributed Doherty Power Amplifier with A New Wideband Power Divider Structure
Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...
متن کاملA CMOS Class-E Cascode Power Amplifier for GSM Application
The design of A 2.4-GHz CMOS Class E cascode power amplifier (PA) for GSM applications in TSMC 0.18-μm CMOS technology present in this paper. Proposed Class E cascode PA topology is a single-stage topology in order to minimize the device stress problem. A parallel capacitor is connected across the transistors for efficiency enrichment also for dominating the effect of parasitic capacitances at ...
متن کاملA Cmos Low Voltage Class-e Power Amplifier for Umts
In this paper we design a low-voltage class-E power amplifier (PA) in a standard CMOS 0.35μm integrated technology, to be used in a UMTS transceiver having the following specifications: f=1.95 GHz, VDC=1 V, Pout=0.5 W. The designed class-E network accommodates the simultaneous presence of a parasitic ground inductance and losses in the switch and shunt-capacitor. The transistor is dimensioned f...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques
سال: 2020
ISSN: 0018-9480,1557-9670
DOI: 10.1109/tmtt.2019.2952771